PART |
Description |
Maker |
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
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ON Semiconductor
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MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
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MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP12P10 MTP12P10_D ON2547 |
From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTP75N06HD MTP75N06HD_D ON2646 |
From old datasheet system TMOS POWER FET 75 AMPERES 50 VOLTS TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS
|
ON Semiconductor Motorola, Inc
|
MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆 From old datasheet system TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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